SUD17N25-165 features ? trenchfet ? power mosfet ? 175 c junction temperature product summary v ds (v) r ds(on) ( )i d (a) 250 0.165 at v gs = 10 v 17 notes: a. surface mounted on 1" x 1" fr4 board. b. see soa curve for voltage derating. to-252 s gd top view drain connected to tab SUD17N25-165-e3 (lead (pb)-free) ordering information: n-channel mosfet g d s absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 250 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) b t c = 25 c i d 17 a t c = 125 c 9.8 pulsed drain current i dm 20 continuous source current (diode conduction) i s 17 single pulse avalanche current i as 5 single pulse avalanche energy l = 0.1 mh e as 1.25 mj maximum power dissipation t c = 25 c p d 136 b w t a = 25 c 3 a operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient a t 10 sec r thja 15 18 c/w steady state 40 50 junction-to-case (drain) r thjc 0.85 1.1 rohs compliant n-channel 250 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 5
notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 250 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.0 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 250 v, v gs = 0 v 1 a v ds = 250 v, v gs = 0 v, t j = 125 c 50 v ds = 250 v, v gs = 0 v, t j = 175 c 250 on-state drain current b i d(on) v ds = 15 v, v gs = 10 v 17 a drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 14 a 0.131 0.165 v gs = 10 v, i d = 14 a, t j = 125 c 0.347 v gs = 10 v, i d = 14 a, t j = 175 c 0.462 forward transconductance b g fs v ds = 15 v, i d = 17 a 36 s dynamic a input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 1950 pf output capacitance c oss 160 reverse transfer capacitance c rss 70 total gate charge c q g v ds = 125 v, v gs = 10 v, i d = 17 a 30 42 nc gate-source charge c q gs 10 gate-drain charge c q gd 10 gate resistance r g 1.6 tu r n - o n d e l ay t i m e c t d(on) v dd = 125 v, r l = 7.35 i d ? 17 a, v gen = 10 v, r g = 2.5 15 25 ns rise time c t r 130 195 turn-off delay time c t d(off) 30 45 fall time c t f 100 150 source-drain diode ratings and characteristics (t c = 25 c) pulsed current i sm 20 a diode forward voltage b v sd i f = 17 a, v gs = 0 v 0.9 1.5 v source-drain reverse recovery time t rr i f = 17 a, di/dt = 100 a/s 115 175 ns www.freescale.net.cn 2 / 5 SUD17N25-165 n-channel 250 v (d-s) 175 c mosfet
typical characteristics 25 c unless noted output characteristics transconductance capacitance v ds - drain-to-source voltage (v) - drain current (a) i d 0 4 8 12 16 20 048121620 v gs = 10 thru 6 v 4 v 5 v 0 10 20 30 40 50 60 048121620 - transconductance (s) g fs t c = - 55 c 25 c 125 c i d - drain current (a) 0 700 1400 2100 2800 0 40 80 120 160 200 v ds - drain-to-source voltage (v) c - capacitance (pf) c oss c iss c rss transfer characteristics on-resistance vs. drain current gate charge v gs - gate-to-source voltage (v) - drain current (a) i d 0 4 8 12 16 20 0123456 - 55 c t c = 125 c 25 c - on-resistance ( ) i d - drain current (a) r ds(on) 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 048121620 v gs = 10 v - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0 4 8 12 16 20 0 8 16 24 32 40 48 5 6 v ds = 125 v i d = 17 a www.freescale.net.cn 3 / 5 SUD17N25-165 n-channel 250 v (d-s) 175 c mosfet
typical characteristics 25 c unless noted thermal ratings on-resistance vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) v gs = 10 v i d = 17 a r ds(on) - on-resistance (normalized) source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c 0 maximum avalanche drain current vs. case temperature t c - case temperature (c) - drain current (a) i d 0 4 8 12 16 20 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) - drain current (a) i d 10 0.1 0.1 1 10 1000 limited by r ds(on) 1 100 t c = 25 c single pulse 10 ms 100 ms, dc 100 s 10 s 100 1 ms normalized thermal transient impedance, junction-to-case 0.02 s q uare wave pulse duration ( sec ) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 1 0.05 single pulse www.freescale.net.cn 4 / 5 SUD17N25-165 n-channel 250 v (d-s) 175 c mosfet
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